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| absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 10 i d @ v gs = 12v, t c = 100c continuous drain current 6.4 i dm pulsed drain current 40 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 58 mj i ar avalanche current 10 a e ar repetitive avalanche energy 7.5 mj dv/dt peak d iode recovery dv/dt 2.4 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. c a www.irf.com 1 features: single event effect (see) hardened ultra low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight smd-0.5 radiation hardened jansr2n7555u3 power mosfet 250v, n-channel surface mount (smd-0.5) ref: mil-prf-19500/704 IRHNJ57234SE technology product summary part number radiation level r ds(on) i d qpl part number IRHNJ57234SE 100k rads (si) 0.4 ? 10a jansr2n7555u3 esd rating: class 1c per mil-std-750, method 1020 pd-93837d IRHNJ57234SE, jansr2n7555u3 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 250 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.30 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.40 ? v gs = 12v, i d = 6.4a resistance v gs(th) gate threshold voltage 2.5 ? 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 3.0 ? ? s v ds = 15v, i ds = 6.4a i dss zero gate voltage drain current ? ? 10 v ds = 200v ,v gs = 0v ??25 v ds = 200v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 32 v gs =12v, i d = 10a q gs gate-to-source charge ? ? 11 nc v ds = 125v q gd gate-to-drain (?miller?) charge ? ? 16 t d (on) turn-on delay time ? ? 25 v dd = 125v, i d = 10a, t r rise time ? ? 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 30 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 1016 ? v gs = 0v, v ds = 25v c oss output capacitance ? 157 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 9.0 ? na nh ns a thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 1.67 r thj-pcb junction-to-pc board ? 6.6 ? c/w measured from the center of drain pad to center of source pad source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 10 i sm pulse source current (body diode) ?? 40 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 10a, v gs = 0v t rr reverse recovery time ? ? 300 ns t j = 25c, i f = 10a, di/dt 100a/ s q rr reverse recovery charge ? ? 3.1 cv dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier web site. www.irf.com 3 IRHNJ57234SE, jansr2n7555u3 table 1. electrical characteristics @ tj = 25c, post total dose irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. typical single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 250 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 10 a v ds = 200v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) ? 0.404 ? v gs = 12v, i d = 6.4a r ds(on) static drain-to-source v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 10a on-state resistance (smd-0.5) ? 0.40 ? v gs = 12v, i d = 6.4a table 2. typical single event effect safe operating area let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs = @vgs = @vgs = @vgs = @vgs = 0v -5v -10v -15v -20v 38 5% 300 7.5% 38 7.5% 250 250 250 250 250 61 5% 330 7.5% 31 10% 250 250 250 250 240 84 5% 350 7.5% 28 7.5% 250 250 225 175 50 0 50 100 150 200 250 300 -20 -15 -10 -5 0 bias vgs (v) bias vds (v) let=38 5% let=61 5% let=84 5% IRHNJ57234SE, jansr2n7555u3 pre-irradiation 4 www.irf.com 15 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 5 6 7 8 9 10 11 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 10a 0 .001 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain to source current (a) ds d 5.0v 0.01 0.001 i d ? drain-to-source current (a) www.irf.com 5 IRHNJ57234SE, jansr2n7555u3 ! ! " " " #$ pre-irradiation 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 10 20 30 40 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 10a v = 50v ds v = 125v ds v = 200v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by rds(on) 100 s dc IRHNJ57234SE, jansr2n7555u3 pre-irradiation 6 www.irf.com $ v ds 90% 10% v gs t d(on) t r t d(off) t f $ %& 1 0.1 % ! + - ' & ( )* " 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d www.irf.com 7 IRHNJ57234SE, jansr2n7555u3 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& & ' " . ( & %& . ( & t p v (br)dss i as pre-irradiation 25 50 75 100 125 150 0 20 40 60 80 100 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.5a 8.0a 10a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v IRHNJ57234SE, jansr2n7555u3 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 200 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 1.15mh peak i l = 10a, v gs = 12v i sd 10a, di/dt 394a/ s, v dd 250v, t j 150c footnotes: case outline and dimensions ? smd-0.5 ir world headquarters: 101 n sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/2015 |
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